Electrical properties of transmutation-doped indium phosphide

Abstract

Experimental results of studying the process of transmutation doping of InP single crystals by irradiating with nuclear-reactor neutrons are reported; the possibility of doping with tin in a wide range of concentrations and obtaining the concentration of free electrons as high as 2×1019 cm−3 is demonstrated. Electrical properties of InP and their behavior under irradiation and in the course of subsequent heat treatments were studied. The prospects for utilization of the nuclear-transmutation method for doping are assessed.