JOURNAL ARTICLE
Electrical properties of neutron-transmutation-doped InSe
Year: 1991 Journal: Applied Surface Science Vol: 50 (1-4)Pages: 415-419 Publisher: Elsevier BV
Keywords:
Doping Tin Nuclear transmutation Annealing (glass) Materials science Semiconductor Hall effect Electrical resistivity and conductivity Neutron Analytical Chemistry (journal) Condensed matter physics Optoelectronics Chemistry Metallurgy Physics Nuclear physics
Metrics
16
Cited By
1.07
FWCI (Field Weighted Citation Impact)
12
Refs
0.73
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Solid-state spectroscopy and crystallography
Physical Sciences → Materials Science → Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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BOOK-CHAPTER
Electrical Property Studies of Neutron Transmutation Doped Silicon
J. W. ClelandP. H. FlemingR. D. WestbrookR. F. WoodR. T. Young
Year: 1979 Pages: 261-279