JOURNAL ARTICLE

Electrical properties of neutron-transmutation-doped InSe

Bernard MariA. SeguraA. Chévy

Year: 1991 Journal:   Applied Surface Science Vol: 50 (1-4)Pages: 415-419   Publisher: Elsevier BV
Keywords:
Doping Tin Nuclear transmutation Annealing (glass) Materials science Semiconductor Hall effect Electrical resistivity and conductivity Neutron Analytical Chemistry (journal) Condensed matter physics Optoelectronics Chemistry Metallurgy Physics Nuclear physics

Metrics

16
Cited By
1.07
FWCI (Field Weighted Citation Impact)
12
Refs
0.73
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Solid-state spectroscopy and crystallography
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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