Thermal recovery of the lattice damage in neutron-transmutation-doped InSe

Abstract

Positron-lifetime and transport measurements have been performed on neutron-transmutation-doped InSe in order to investigate the nature and recovery characteristics of the recoil-induced damage. The results show that the recovery is accomplished in two stages. The first, in the temperature interval 325 < T ≤ 375 K, is attributed to recombination of VIn-SnI close pairs into SnIn. The second, observed for temperatures above ≈475 K, is associated with annealing of other V¡0-related defects.