Transport limits in defect-engineered LaAlO<sub>3</sub>/SrTiO<sub>3</sub> bilayers

Felix Gunkel; Sebastian Wicklein; Susanne Hoffmann‐Eifert; P. Meuffels; Peter Brinks; Mark Huijben; Guus Rijnders; Rainer Waser; Regina Dittmann

doi:10.1039/c4nr06272h

JOURNAL ARTICLE

Transport limits in defect-engineered LaAlO₃/SrTiO₃ bilayers

Felix Gunkel Sebastian Wicklein Susanne Hoffmann‐Eifert P. Meuffels Peter Brinks Mark Huijben Guus Rijnders Rainer Waser Regina Dittmann

Year: 2014 Journal: Nanoscale Vol: 7 (3)Pages: 1013-1022 Publisher: Royal Society of Chemistry

DOI: 10.1039/c4nr06272h

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Abstract

The electrical properties of the metallic interface in LaAlO₃/SrTiO₃ (LAO/STO) bilayers are investigated with focus on the role of cationic defects in thin film STO.

Keywords:

Bilayer Stoichiometry Materials science Quenching (fluorescence) Thin film Condensed matter physics Chemical physics Nanotechnology Physical chemistry Chemistry Membrane Optics

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Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transport limits in defect-engineered LaAlO₃/SrTiO₃ bilayers

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