Largely Enhanced Mobility in Trilayered LaAlO₃/SrTiO₃/LaAlO₃ Heterostructures

Abstract

LaAlO₃ (LAO)/SrTiO₃ (STO)/LaAlO₃ (LAO) heterostructures were epitaxially deposited on TiO₂-terminated (100) SrTiO₃ single-crystal substrates by laser molecular beam epitaxy. The electron Hall mobility of 1.2 × 10⁴ cm²/V s at 2 K was obtained in our trilayered heterostructures grown under 1 × 10^-5 Torr, which was significantly higher than that in single-layer 5 unit cells LAO (∼4 × 10³ cm²/V s) epitaxially grown on (100) STO substrates under the same conditions. It is believed that the enhancement of dielectric permittivity in the polar insulating trilayer can screen the electric field, thus reducing the carrier effective mass of the two-dimensional electron gas formed at the TiO₂ interfacial layer in the substrate, resulting in a largely enhanced mobility, as suggested by the first-principle calculation. Our results will pave the way for designing high-mobility oxide nanoelectronic devices based on LAO/STO heterostructures.