Properties of Al2O3 thin films grown by atomic layer deposition

K. Fröhlich; Matej Mičušík; Edmund Dobročka; Peter Šiffalovič; Filip Gucmann; J. Fedor

doi:10.1109/asdam.2012.6418575

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Properties of Al2O3 thin films grown by atomic layer deposition

K. Fröhlich Matej Mičušík Edmund Dobročka Peter Šiffalovič Filip Gucmann J. Fedor

Year: 2012 Pages: 171-174

DOI: 10.1109/asdam.2012.6418575

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Abstract

Thin Al ₂ O ₃ films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al ₂ O ₃ films grown at low temperatures have promising applications in microelectronics.

Keywords:

Microelectronics X-ray photoelectron spectroscopy Layer (electronics) Impurity Thin film Deposition (geology) Atomic layer deposition Analytical Chemistry (journal) Materials science Nanotechnology Chemical engineering Chemistry Organic chemistry Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Properties of Al2O3 thin films grown by atomic layer deposition

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