Ruthenium Thin Films Grown by Atomic Layer Deposition

Abstract

Abstract Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275–400 °C using bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen as precursors. The ruthenium films were grown on thin Al 2 O 3 and TiO 2 films on glass. X‐ray diffraction (XRD) analysis indicated that the films were polycrystalline metallic ruthenium and scanning electron microscopy (SEM) studies showed that the films had excellent conformality. The impurity content of the films, as measured by time‐of‐flight elastic recoil detection analysis (TOF‐ERDA), were very low. All the films had resistivities below 20 μΩ cm.