Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

Charles W. Teplin; Matthew Page; E. Iwaniczko; K. M. Jones; Robert M. Ready; Bobby To; Helio Moutinho; Qi M. Wang; Howard M. Branz

doi:10.1557/proc-0910-a15-01

JOURNAL ARTICLE

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

Charles W. Teplin Matthew Page E. Iwaniczko K. M. Jones Robert M. Ready Bobby To Helio Moutinho Qi M. Wang Howard M. Branz

Year: 2006 Journal: MRS Proceedings Vol: 910 Publisher: Cambridge University Press

DOI: 10.1557/proc-0910-a15-01

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Keywords:

Materials science Epitaxy Chemical vapor deposition Silicon Wafer Silane Surface roughness Surface finish Nucleation Composite material Optoelectronics Layer (electronics) Chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

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