Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

Charles W. Teplin; E. Iwaniczko; K. M. Jones; R. C. Reedy; Bobby To; Howard M. Branz

doi:10.1557/proc-862-a2.3

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Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

Charles W. Teplin E. Iwaniczko K. M. Jones R. C. Reedy Bobby To Howard M. Branz

Year: 2005 Journal: MRS Proceedings Vol: 862 Publisher: Cambridge University Press

DOI: 10.1557/proc-862-a2.3

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Keywords:

Materials science Epitaxy Silicon Chemical vapor deposition Tantalum Analytical Chemistry (journal) Wafer Transmission electron microscopy Hydrogen Substrate (aquarium) Scanning electron microscope Ellipsometry Thin film Optoelectronics Nanotechnology Composite material Layer (electronics) Metallurgy

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Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

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