High detectivity ZnSe-based Schottky barrier photodetectorsfor blue and near-ultraviolet spectral range

Abstract

A characterisation of ZnSe-based Schottky barrier photodetectors grown by molecular beam epitaxy is presented. High quality diodes exhibiting a high responsivity of 0.10 A/W at 455 nm and a sharp cut-off of three to four orders of magnitude have been fabricated. A detectivity of 1.4 × 1010 mHz1/2W-1 has been obtained for a structure with a 5 mm2 area operating at –3.5 V bias. These results highlight the potential of ZnSe in blue and near-ultraviolet light detection.