GaN-based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360–50 nm)

Abstract

The characterization of Schottky type ultraviolet (UV) detectors with a transparent electrode from the near UV to vacuum UV (VUV) region using synchrotron radiation is described. The responsivity of the photodetectors with a transparent Schottky electrode is about 0.15 A/W at 360 nm and is about 0.01 A/W in the VUV region. Furthermore the antireflection film and annealing of the Schottky transparent electrode are effective to improve the device performance. Therefore, Schottky type photodetectors are available to operate from the near UV and the VUV light (360–50 nm).