GaAs-Ga_xAl_1-xAs electroluminescent heterostructure diodes

Abstract

GaAs(Zn) electroluminescent diodes using a GaAs-Ga x Al 1-x As heterostructure design with external quantum efficiencies (300°K) of 10%, that 40 milliwatts of continuous output at a current of 1 ampere, have been developed. The heterostructure consists of a Ga x Al 1-x As(Zn) p-layer grown by liquid-phase epitaxy on an n-type GaAs(Si) substrate ( n = 1-4 \times 10^{18} /cm ³ ) with the simultaneous diffusion of Zn a distance of ∼ 2 µm into the substrate.