Electroluminescent GaAs–Ga <sub>x</sub> Al <sub>1−x</sub> As heterostructure diodes with negative resistance at low temperatures

H. Beneking; A. Gattung

doi:10.1049/el:19750029

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Electroluminescent GaAs–Ga _x Al _1−x As heterostructure diodes with negative resistance at low temperatures

H. Beneking A. Gattung

Year: 1975 Journal: Electronics Letters Vol: 11 (2)Pages: 37-38 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19750029

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Abstract

GaAs–GaxAl1−xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert's model of double injection.

Keywords:

Heterojunction Materials science Optoelectronics Electroluminescence Diode X-ray absorption spectroscopy Doping Electrical resistivity and conductivity Layer (electronics) Double heterostructure Light-emitting diode Electrical engineering Composite material Semiconductor laser theory Optics Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electroluminescent GaAs–Ga _x Al _1−x As heterostructure diodes with negative resistance at low temperatures

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