Transit-time-induced microwave negative resistance in Ga <sub>1−x</sub> Al <sub>x</sub> as—GaAs heterostructure diodes

J.E. Sitch; A. Majerfeld; P.N. Robson; Fumio Hasegawa

doi:10.1049/el:19750351

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Transit-time-induced microwave negative resistance in Ga _1−x Al _x as—GaAs heterostructure diodes

J.E. Sitch A. Majerfeld P.N. Robson Fumio Hasegawa

Year: 1975 Journal: Electronics Letters Vol: 11 (19)Pages: 457-458 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19750351

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Abstract

Following recent experimental observations by Immorlica and Pearson that the saturated drift velocity of electrons in Ga0.62Al0.38As is considerably lower than in GaAs, a heterostructure transit-time diode is proposed. The resulting device is shown to have a relatively large negative resistance, a small Q factor and low noise measure. Large-signal calculations predict a maximum efficiency of 18%.

Keywords:

Heterojunction Diode Negative resistance Microwave Optoelectronics Materials science Transit time Electron Gallium arsenide SIGNAL (programming language) Drift velocity Electrical engineering Physics Engineering Voltage

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Transit-time-induced microwave negative resistance in Ga _1−x Al _x as—GaAs heterostructure diodes

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