Elective Growth in the CoSi2/Si System by Molecular Beam Epitaxy

T. George; R. W. Fathauer

doi:10.1557/proc-221-161

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Elective Growth in the CoSi2/Si System by Molecular Beam Epitaxy

T. George R. W. Fathauer

Year: 1991 Journal: MRS Proceedings Vol: 221 Publisher: Cambridge University Press

DOI: 10.1557/proc-221-161

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Keywords:

Materials science Molecular beam epitaxy Selectivity Coalescence (physics) Epitaxy Substrate (aquarium) Layer (electronics) Crystal growth Silicon Chemical engineering Nanotechnology Crystallography Optoelectronics Catalysis Chemistry

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Elective Growth in the CoSi2/Si System by Molecular Beam Epitaxy

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