Molecular beam epitaxy growth of CoSi2 at room temperature

Abstract

Single-crystal type B CoSi2 thin layers have been grown on Si(111) by codeposition at room temperature. The existence of a good quality CoSi2 template layer on the surface prior to the codeposition is essential. This requirement can be satisfied by either an annealed CoSi2 thin layer or by a small amount of cobalt deposited at room temperature. The topography of the original substrate surface has a predominant effect on the structure of line defects at the CoSi2 interface formed at room temperature. Results obtained from transmission electron microscopy and Rutherford backscattering are presented.