Molecular beam epitaxial growth of Si on CoSi2 substrates

Abstract

Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C.