Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

Qiyue Shao; Aidong Li; Huiqin Ling; Di Wu; Yuan Wang; Yan Feng; Senzu Yang; Zhiguo Liu; Mu Wang; Nai‐Ben Ming

doi:10.1016/s0167-9317(02)01009-2

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Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

Qiyue Shao Aidong Li Huiqin Ling Di Wu Yuan Wang Yan Feng Senzu Yang Zhiguo Liu Mu Wang Nai‐Ben Ming

Year: 2003 Journal: Microelectronic Engineering Vol: 66 (1-4)Pages: 842-848 Publisher: Elsevier BV

DOI: 10.1016/s0167-9317(02)01009-2

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Keywords:

Metalorganic vapour phase epitaxy Chemical vapor deposition Annealing (glass) Materials science Dielectric Analytical Chemistry (journal) Equivalent oxide thickness Thin film Gate dielectric Optoelectronics Gate oxide Nanotechnology Epitaxy Chemistry Composite material Transistor Layer (electronics) Organic chemistry Electrical engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

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Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

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