JOURNAL ARTICLE

Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Keywords:
Chemical vapor deposition Metalorganic vapour phase epitaxy Materials science Amorphous solid Dielectric Substrate (aquarium) Layer (electronics) Gate dielectric Chemical engineering Oxide Analytical Chemistry (journal) Nanotechnology Optoelectronics Chemistry Epitaxy Crystallography Metallurgy Organic chemistry

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81
Cited By
5.02
FWCI (Field Weighted Citation Impact)
24
Refs
0.96
Citation Normalized Percentile
Is in top 1%
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Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electronic and Structural Properties of Oxides
Physical Sciences →  Materials Science →  Materials Chemistry
Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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