Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Jin-Bo Cheng; Aidong Li; Qiyue Shao; Huiqin Ling; Di Wu; Yuan Wang; Yongjun Bao; Mu Wang; Zhiguo Liu; Nai‐Ben Ming

doi:10.1016/j.apsusc.2004.03.232

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Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Jin-Bo Cheng Aidong Li Qiyue Shao Huiqin Ling Di Wu Yuan Wang Yongjun Bao Mu Wang Zhiguo Liu Nai‐Ben Ming

Year: 2004 Journal: Applied Surface Science Vol: 233 (1-4)Pages: 91-98 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2004.03.232

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Keywords:

Chemical vapor deposition Metalorganic vapour phase epitaxy Materials science Amorphous solid Dielectric Substrate (aquarium) Layer (electronics) Gate dielectric Chemical engineering Oxide Analytical Chemistry (journal) Nanotechnology Optoelectronics Chemistry Epitaxy Crystallography Metallurgy Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

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