ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

Abstract

In this paper, the deposited properties of ZnS thin films prepared by the low-pressure metalorganic chemical vapor deposition (MOCVD) technique utilizing dimethyl-zinc (DMZn) and H 2 S as the source materials have been reported. The effects of the growth conditions on the growth rate of the films have been measured and the growth mechanism has been discussed. High-quality ZnS thin films with strong preferred orientation can be grown. The Δ2θ value of the zinc blende (111) plane diffraction peak can be reduced below 0.175°. The atomic ratio of S/Zn and lattice constant are 0.96 and 5.418 Å, respectively.