Electronic structure of molecular beam epitaxy grown CaF2 on Si(111)

Abstract

High resolution core level spectroscopy, polarization-dependent near edge x-ray absorption fine structure and angle-resolved photoemission have been used to study CaF2 grown by molecular beam epitaxy on Si(111). It is found that both Ca and F bond to Si at the interface and that both Ca and F-derived interface states are created. A new radiation induced ordered structure is also reported.