Molecular beam epitaxy of CdF2 layers on CaF2(111) and Si(111)

Abstract

Cadmium fluoride single crystal layers have been grown on CaF2/Si(111) or Si(111) substrates by molecular beam epitaxy. The structures are expected to have attractive electronic properties. The growth was monitored by reflections high energy electron diffraction (RHEED) techniques. A distinct (√3×√3) R30° superstructure has been observed on the CdF2(111) surface at growth temperatures below 150 °C. RHEED intensity oscillations indicate a two-dimensional growth mode of CdF2.