Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxy

V. Mathet; F. Nguyen Van Dau; J. Olivier; Pierre Galtier

doi:10.1016/0022-0248(94)00869-8

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Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxy

V. Mathet F. Nguyen Van Dau J. Olivier Pierre Galtier

Year: 1995 Journal: Journal of Crystal Growth Vol: 148 (1-2)Pages: 133-139 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(94)00869-8

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Keywords:

Vicinal Molecular beam epitaxy Transmission electron microscopy Epitaxy Crystallography Layer (electronics) Chemistry Materials science Atomic force microscopy Optoelectronics Nanotechnology

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Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxy

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