High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

S. Vepřek; Th. Kunstamann; J. Hofmann; D. Volm; B. K. Meyer

doi:10.1557/proc-399-183

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High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

S. Vepřek Th. Kunstamann J. Hofmann D. Volm B. K. Meyer

Year: 1995 Journal: MRS Proceedings Vol: 399 Publisher: Cambridge University Press

DOI: 10.1557/proc-399-183

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Keywords:

Materials science Deposition (geology) Layer (electronics) Buffer (optical fiber) Substrate (aquarium) Chemical engineering Optoelectronics Composite material Electrical engineering

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

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