Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

M. Wilhelm; M. Rieth; Marco Brandl; Rachmat Adhi Wibowo; Rainer Hock; Peter J. Wellmann

doi:10.1016/j.tsf.2015.01.049

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Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

M. Wilhelm M. Rieth Marco Brandl Rachmat Adhi Wibowo Rainer Hock Peter J. Wellmann

Year: 2015 Journal: Thin Solid Films Vol: 577 Pages: 88-93 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2015.01.049

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Keywords:

Epitaxy Materials science Raman spectroscopy Scanning electron microscope Thermal expansion Diffraction Analytical Chemistry (journal) Layer (electronics) Residual stress Atomic force microscopy Crystallography Optoelectronics Composite material Optics Nanotechnology Chemistry

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

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