Heteroepitaxial growth and ESR evaluation of 3C-SiC

Hiroyuki Nagasawa; Yuta Yamaguchi; Takato Izumi; K. Tonosaki

doi:10.1016/0169-4332(93)90577-x

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Heteroepitaxial growth and ESR evaluation of 3C-SiC

Hiroyuki Nagasawa Yuta Yamaguchi Takato Izumi K. Tonosaki

Year: 1993 Journal: Applied Surface Science Vol: 70-71 Pages: 542-545 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(93)90577-x

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Keywords:

Dangling bond Electron paramagnetic resonance Atmospheric temperature range Materials science Carbide Amorphous solid Silicon carbide Analytical Chemistry (journal) Adsorption Growth rate Chemical vapor deposition Paramagnetism Silicon Crystallography Chemistry Nuclear magnetic resonance Nanotechnology Physical chemistry Metallurgy Condensed matter physics Thermodynamics

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Heteroepitaxial growth and ESR evaluation of 3C-SiC

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