CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Abstract

This study has been focused on 3C-SiC epitaxial growth on 4H-SiC (0001) on-axis substrates using the standard CVD chemistry. Several growth parameters were investigated, including growth temperature, in-situ etching process and C/Si ratio. High quality single domain 3C epilayers could be obtained around 1350 °C, with propane present during pre-growth etching and when the C/Si ratio was equal to 1. The best grown layer is 100% 3C-SiC and single domain. The net n-type background doping is around 2x10 16 cm -3 . The surface roughness of the layers from AFM analysis is in the 3 to 8 nm range on a 50x50 μm2 area.