Electronic Properties of Hot-Wire Deposited Nanocrystalline Silicon

R. Brüggemann; A. Hierzenberger; H.N. Wanka; M.B. Schubert

doi:10.1557/proc-507-921

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Electronic Properties of Hot-Wire Deposited Nanocrystalline Silicon

R. Brüggemann A. Hierzenberger H.N. Wanka M.B. Schubert

Year: 1998 Journal: MRS Proceedings Vol: 507 Publisher: Cambridge University Press

DOI: 10.1557/proc-507-921

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Keywords:

Materials science Nanocrystalline material Nanocrystalline silicon Photoconductivity Amorphous silicon Annealing (glass) Amorphous solid Band gap Conductivity Photocurrent Chemical vapor deposition Electrical resistivity and conductivity Silicon Optoelectronics Analytical Chemistry (journal) Crystalline silicon Composite material Nanotechnology Crystallography

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Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Electronic Properties of Hot-Wire Deposited Nanocrystalline Silicon

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