Silicon Nanowire Field Effect Devices By Top-Down CMOS Technology

Abstract

There has been tremendous advancement in the development of novel nano-technologies for future CMOS nanoelectronics. The challenges and opportunities have been widely discussed with the focus on the choice of materials, processes of implementation and innovative non-classical device architectures to continuously meet the scaling requirements. Among the non-classical device architectures, Gate All Around (GAA) FET with nanowire (NW) channel body offers the ultimate electro-static control and thus has the potential to push the gate length to few nanometers. The key challenge for NWs to be widely adopted in semiconductor industry is that they have to be formed by large scale manufacturing methods. Especially, for CMOS applications, the methods should not lead to contamination issues.