Characterization of GaSb thin films from tailor-made single-source precursors

Abstract

We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor.The precursor properties during the evaporation process where monitored by RGA.The initial film growth was monitored by AES.Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS.The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.