Procedures developed for mounting ICs in holes in a silicon wafer and inter-connecting them, via two-level metalization, will be presented. The performance of the interconnections at high speeds will be compared with traditional hybrid assemblies.
Wayne JohnsonJ.L. DavidsonR.C. JaegerD.V. Kerns
Wayne JohnsonR.C. JaegerTravis N. Blalock
M.J. DaviesA. MunnsD.J. Pedder
Paul O. HaugsjaaCraig ArmientoP. Melman
J. BaborowskiA. PezousGuido Spinola DuranteRob JamesRoger ZiltenerClaude MullerM.-A. Dubois