Molecular-beam epitaxial growth of boron-doped GaAs films

Abstract

GaAs films doped with boron in the 1020 cm−3 range were grown by solid source molecular-beam epitaxy. Lattice contractions were observed in x-ray double crystal spectra. Substitutional boron concentrations up to 1.7×1020 cm−3 were obtained with narrow x-ray linewidths and specular surface morphology. For a given boron flux, the substitutional concentration was dependent on growth temperature. P-type conductivity due to boron incorporation was measured in the films with hole concentration reaching 1×1019 cm−3. The lattice contractions exhibited good thermal stability for rapid thermal anneals.