Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

I. Poole; K.E. Singer; А. R. Peaker; Andrew Wright

doi:10.1016/0022-0248(92)90181-h

ScienceGate Book Chapters

JOURNAL ARTICLE

Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

I. Poole K.E. Singer А. R. Peaker Andrew Wright

Year: 1992 Journal: Journal of Crystal Growth Vol: 121 (1-2)Pages: 121-131 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(92)90181-h

Get Full-Text PDF Get Analytical Report

Keywords:

Erbium Molecular beam epitaxy Epitaxy Materials science Substrate (aquarium) Transmission electron microscopy Doping Gallium arsenide Gallium Analytical Chemistry (journal) Optoelectronics Crystallography Chemistry Nanotechnology Metallurgy

Metrics

Cited By

1.71

FWCI (Field Weighted Citation Impact)

Refs

0.84

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

Metrics

Citation History

Topics

Related Documents

Molecular-beam epitaxial growth and characterization of erbium-doped GaAs and AlGaAs

Erbium doping of molecular beam epitaxial GaAs

Molecular-beam epitaxial growth of boron-doped GaAs films

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

Characterization of high-purity Si-doped molecular beam epitaxial GaAs