Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

R. G. Benz; Po-Chia Huang; Stuart R. Stock; Christopher J. Summers

doi:10.1016/0022-0248(90)90734-3

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Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

R. G. Benz Po-Chia Huang Stuart R. Stock Christopher J. Summers

Year: 1988 Journal: Journal of Crystal Growth Vol: 86 (1-4)Pages: 303-310 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(90)90734-3

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Keywords:

Nucleation Molecular beam epitaxy Epitaxy Materials science Electron diffraction Crystal (programming language) Characterization (materials science) Crystallography Reflection high-energy electron diffraction Crystal growth Diffraction Layer (electronics) Planar Surface roughness Molecular beam Chemistry Optoelectronics Optics Molecule Nanotechnology Composite material

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

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