Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs

Nobuaki Kojima; Kei Sato; Maman Budiman; Akira Yamada; Makoto Konagai; Kiyoshi Takahashi; Yoshio Nakamura; Osamu Nittono

doi:10.1016/0022-0248(95)80124-u

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Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs

Nobuaki Kojima Kei Sato Maman Budiman Akira Yamada Makoto Konagai Kiyoshi Takahashi Yoshio Nakamura Osamu Nittono

Year: 1995 Journal: Journal of Crystal Growth Vol: 150 Pages: 1175-1179 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)80124-u

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Keywords:

Epitaxy Molecular beam epitaxy Characterization (materials science) Materials science Optoelectronics Crystallography Chemistry Nanotechnology Layer (electronics)

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Solid-state spectroscopy and crystallography

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs

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