Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs

Abstract

An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g _m and the output conductance g _d are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g _m / g _d jointly with the lower value of the gate resistance R _g lead to an improvement of the extrinsic frequency performance (f _max and f _t ).