Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate

Abstract

We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance g _{m_max} and gate capacitance C _g increase with increasing the buried depth d. The extent of increase in the g _{m_max} is more than that in C _g . As a result, the cutoff frequency f _T increases with increase the buried depth d. These phenomena agree with our previous experimental results.