High-efficiency pulsed GaAs avalanche diodes

D.R. Melick

doi:10.1109/proc.1967.5523

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High-efficiency pulsed GaAs avalanche diodes

D.R. Melick

Year: 1967 Journal: Proceedings of the IEEE Vol: 55 (3)Pages: 435-436 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/proc.1967.5523

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Abstract

Efficiencies as high as 7.8 percent yielding 380 mW at 6.8 GHz and output powers up to 1.3 watts at 6.5 GHz (3.6 percent efficiency) have been observed in GaAs p-n junction avalanche diodes. Diode diameters ranged from 2.5 to 7.5 mils with best efficiencies occurring in the range from 2.5 to 4.2 mils, for the circuit used.

Keywords:

Diode Optoelectronics Materials science Avalanche diode Single-photon avalanche diode Range (aeronautics) Gallium arsenide Avalanche photodiode Optics Electrical engineering Physics Breakdown voltage Voltage Engineering Detector

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Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-efficiency pulsed GaAs avalanche diodes

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