JOURNAL ARTICLE
High-Efficiency Frequency Multiplication with GaAs Avalanche Diodes (Short Papers)
Bernard M. KramerAlain DeryckeA. FarrayreChristophe Masse
Year: 1976 Journal: IEEE Transactions on Microwave Theory and Techniques Vol: 24 (11)Pages: 861-863 Publisher: IEEE Microwave Theory and Techniques Society
Abstract
GaAs avalanche diodes for frequency multiplication at millimeter wavelengths have been investigated. The GaAs diode design is described and compared with that of Si diodes. Experimental results obtained in the optimum circuit are presented. Frequency multiplication from 4 to 32 GHz with 6-dB conversion loss (400 to 100 mW) and 1.5-W dc bias power was achieved. A temperature dependence of the output power was measured to be less than 1 dB over the -40 to +60/spl deg/C range.
Keywords:
Diode Optoelectronics Materials science Gallium arsenide Multiplication (music) Millimeter Extremely high frequency Schottky diode Single-photon avalanche diode Power (physics) Optics Avalanche photodiode Electrical engineering Physics Detector Engineering
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Topics
Microwave Engineering and Waveguides
Physical Sciences → Engineering → Electrical and Electronic Engineering
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Superconducting and THz Device Technology
Physical Sciences → Physics and Astronomy → Astronomy and Astrophysics
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