High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators

Sonja Huber; Manfred Claassen; H. Grothe

doi:10.1049/el:19890576

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High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators

Sonja Huber Manfred Claassen H. Grothe

Year: 1989 Journal: Electronics Letters Vol: 25 (13)Pages: 855-856 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19890576

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Abstract

GaAs pin avalanche diodes have been fabricated for millimetre-wave frequencies using molecular beam epitaxy. The highest obtained pulsed output power was 15 W with 8% efficiency at 50.1 GHz. The maximum observed efficiency was 11.1% at 57.4 GHz and 8.3 W output power.

Keywords:

Optoelectronics Materials science Diode Molecular beam epitaxy Gallium arsenide Extremely high frequency Avalanche diode Single-photon avalanche diode Power (physics) Energy conversion efficiency Epitaxy Avalanche photodiode Optics Electrical engineering Breakdown voltage Detector Physics Voltage

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Microwave Engineering and Waveguides

Physical Sciences → Engineering → Electrical and Electronic Engineering

Superconducting and THz Device Technology

Physical Sciences → Physics and Astronomy → Astronomy and Astrophysics

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators

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