Atomic layer deposition of Ge2Sb2Te5 thin films

Mikko Ritala; Viljami Pore; Timo Hatanpää; Mikko Heikkilä; Markku Leskelä; Kenichiro Mizohata; A. G. Schrott; Simone Raoux; S. M. Rossnagel

doi:10.1016/j.mee.2009.03.014

JOURNAL ARTICLE

Atomic layer deposition of Ge2Sb2Te5 thin films

Mikko Ritala Viljami Pore Timo Hatanpää Mikko Heikkilä Markku Leskelä Kenichiro Mizohata A. G. Schrott Simone Raoux S. M. Rossnagel

Year: 2009 Journal: Microelectronic Engineering Vol: 86 (7-9)Pages: 1946-1949 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2009.03.014

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Keywords:

Elastic recoil detection Atomic layer deposition Thin film Crystallization Materials science Layer (electronics) Deposition (geology) Sputtering Pulsed laser deposition Analytical Chemistry (journal) Sputter deposition Diffraction X-ray crystallography Chemical engineering Chemistry Nanotechnology Optics

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Glass properties and applications

Physical Sciences → Materials Science → Ceramics and Composites

Atomic layer deposition of Ge2Sb2Te5 thin films

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