Conductivity in heavily doped and compensated epitaxial gallium arsenide layers

Abstract

The dependence of conductivity on electric field and on temperature in heavily doped and strongly compensated liquid-phase epitaxial GaAs layers is investigated. From the dependences on temperature (in low electric fields) and electric field (in strong electric fields) determined experimentally, a localisation radius a and density of states at the Fermi level g(EF) are determined and the value of the degree of compensation K for 1-K<<1 is estimated. Good agreement between theory and experiment is obtained. At moderate electric fields qualitative agreement with the existing theoretical models is obtained.