Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

Abstract

Carrier/exciton localization in InGaN quantum wells (QWs) for green laser diodes fabricated on semi-polar {2021} GaN substrates is assessed using time-resolved photoluminescence (TRPL) spectroscopy. The estimated characteristic energy, which represents the localization depth in a {2021} InGaN QW, is 15.1 meV. This value is much smaller than that reported for c-plane green InGaN QWs, indicating a high compositional homogeneity of {2021} InGaN QWs and consequently suggesting that the GaN semi-polar {2021} plane is suitable for fabricating green laser diodes.