Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi; Masahiro Adachi; Yohei Enya; Takashi Kyono; Shinji Tokuyama; Takamichi Sumitomo; Katsushi Akita; Takatoshi Ikegami; Masaki Ueno; Koji Katayama; Takao Nakamura

doi:10.1143/apex.2.092101

JOURNAL ARTICLE

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi Masahiro Adachi Yohei Enya Takashi Kyono Shinji Tokuyama Takamichi Sumitomo Katsushi Akita Takatoshi Ikegami Masaki Ueno Koji Katayama Takao Nakamura

Year: 2009 Journal: Applied Physics Express Vol: 2 (9)Pages: 092101-092101 Publisher: Institute of Physics

DOI: 10.1143/apex.2.092101

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Abstract

Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.

Keywords:

Materials science Optoelectronics Cladding (metalworking) Diode Laser Continuous wave Epitaxy Green laser Blue laser Polar Optics Layer (electronics) Nanotechnology Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

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