Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Takashi KyonoYusuke YoshizumiYohei EnyaMasahiro AdachiShinji TokuyamaMasaki UenoKoji KatayamaTakao Nakamura
Abstract
The polarization characteristics of InGaN quantum wells on semi-polar {2021} GaN substrates were investigated to reveal the advantageous laser stripe orientation. The polarization ratio exhibited a gradual increase within the range of around 0.2 to 0.3 with an increase in the emission wavelength from 400 to 550 nm under a low current density of 7.4 A/cm2. In addition, the dependence on a current density was quite small up to 0.74 kA/cm2. These results suggest that the laser stripe perpendicular to the a-axis direction is favorable for green laser diodes.
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