Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

Diane Rébiscoul; S. Favier; Jean‐Paul Barnes; Jan Willem Maes; F. Martín

doi:10.1016/j.mee.2009.06.013

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Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

Diane Rébiscoul S. Favier Jean‐Paul Barnes Jan Willem Maes F. Martín

Year: 2009 Journal: Microelectronic Engineering Vol: 87 (3)Pages: 278-281 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2009.06.013

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Keywords:

Annealing (glass) Atomic layer deposition Lanthanum oxide Materials science Dissolution Silicate Homogeneity (statistics) Chemical engineering Lanthanum Mineralogy Analytical Chemistry (journal) Thin film Nanotechnology Chemistry Composite material Inorganic chemistry Metallurgy Computer science Environmental chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Advanced ceramic materials synthesis

Physical Sciences → Materials Science → Ceramics and Composites

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

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