Study of the Deep Levels of a GaAs/p-GaAs<sub>1−x</sub>Bi<sub>x</sub>Heterostructure Grown by Molecular Beam Epitaxy

Takuma Fuyuki; Shota Kashiyama; Kunishige Oe; Masahiro Yoshimoto

doi:10.1557/opl.2012.904

ScienceGate Book Chapters

JOURNAL ARTICLE

Study of the Deep Levels of a GaAs/p-GaAs_1−xBi_xHeterostructure Grown by Molecular Beam Epitaxy

Takuma Fuyuki Shota Kashiyama Kunishige Oe Masahiro Yoshimoto

Year: 2012 Journal: MRS Proceedings Vol: 1432 Publisher: Cambridge University Press

DOI: 10.1557/opl.2012.904

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Molecular beam epitaxy Heterojunction Epitaxy Metastability Isothermal process Spectroscopy Deep-level transient spectroscopy Optoelectronics Analytical Chemistry (journal) Nanotechnology Chemistry Silicon Physics

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.11

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Study of the Deep Levels of a GaAs/p-GaAs_1−xBi_xHeterostructure Grown by Molecular Beam Epitaxy

Metrics

Topics

Related Documents

Deep-Hole Traps in p-Type GaAs_1-xBi_x Grown by Molecular Beam Epitaxy

Interface States in p-Type GaAs/GaAs_1-xBi_xHeterostructure

Growth of GaAs_1–xBi_x/GaAs multi‐quantum wells by molecular beam epitaxy

Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

Deep-Hole Traps in p-Type GaAs_1-xBi_xGrown by Molecular Beam Epitaxy

Study of the Deep Levels of a GaAs/p-GaAs1−xBixHeterostructure Grown by Molecular Beam Epitaxy

Metrics

Topics

Related Documents

Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy

Interface States in p-Type GaAs/GaAs1-xBixHeterostructure

Growth of GaAs1–xBix/GaAs multi‐quantum wells by molecular beam epitaxy

Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

Deep-Hole Traps in p-Type GaAs1-xBixGrown by Molecular Beam Epitaxy

Study of the Deep Levels of a GaAs/p-GaAs_1−xBi_xHeterostructure Grown by Molecular Beam Epitaxy

Deep-Hole Traps in p-Type GaAs_1-xBi_x Grown by Molecular Beam Epitaxy

Interface States in p-Type GaAs/GaAs_1-xBi_xHeterostructure

Growth of GaAs_1–xBi_x/GaAs multi‐quantum wells by molecular beam epitaxy

Deep-Hole Traps in p-Type GaAs_1-xBi_xGrown by Molecular Beam Epitaxy