Thin-film transistors based on nickel phthalocyanine

Abstract

Thin-film transistors have been made using nickel phthalocyanine (PcNi) as active component. The characteristics of these transistors are studied with positive and negative gate-source and drain-source polarizations. The channel conductivity was p type. Very different thicknesses of PcNi layer are used, showing that in the two polarizations the effects are interfacial.