Transient behaviour of thin film transistors based on nickel phthalocyanine

G. Guillaud; Rafik Ben Chaâbane; C. Jouve; M. Gamoudi

doi:10.1016/0040-6090(94)06405-9

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Transient behaviour of thin film transistors based on nickel phthalocyanine

G. Guillaud Rafik Ben Chaâbane C. Jouve M. Gamoudi

Year: 1995 Journal: Thin Solid Films Vol: 258 (1-2)Pages: 279-282 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(94)06405-9

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Keywords:

Transient (computer programming) Nickel Transistor Thin-film transistor Materials science Optoelectronics Thin film Voltage Phthalocyanine Gate voltage Current (fluid) Field-effect transistor Threshold voltage Biasing Condensed matter physics Electrical engineering Composite material Nanotechnology Physics Metallurgy Computer science Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Organic Electronics and Photovoltaics

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transient behaviour of thin film transistors based on nickel phthalocyanine

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