Transient properties of nickel phthalocyanine thin film transistors

G. Guillaud; Jacques Simon

doi:10.1016/0009-2614(94)00050-6

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Transient properties of nickel phthalocyanine thin film transistors

G. Guillaud Jacques Simon

Year: 1994 Journal: Chemical Physics Letters Vol: 219 (1-2)Pages: 123-126 Publisher: Elsevier BV

DOI: 10.1016/0009-2614(94)00050-6

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Keywords:

Transient (computer programming) Nickel Transistor Materials science Phthalocyanine Thin-film transistor Optoelectronics Gate voltage Thin film Insulator (electricity) Doping Voltage Transient response Analytical Chemistry (journal) Electrical engineering Chemistry Nanotechnology Metallurgy Computer science Engineering Layer (electronics) Chromatography

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nonlinear Optical Materials Studies

Physical Sciences → Engineering → Biomedical Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Transient properties of nickel phthalocyanine thin film transistors

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